Following parameters are from VBIC version 1.2, which is implemented in LTSpice in the 4-terminal version without excess phase network and self-heating effect. O Weak avalanche and Base-emitter breakdown modelīecause the VBIC model is based on SGP model it is possible to start with SGP parameters, carry out some transformations. O Integrated Substrate transistor for parasitic devices in integrated processes VBIC Capabilities compared to Standard Gummel-Poon Model It is a widely used alternative to the SGP model for silicon, SiGe and III-V HBT devices. With the implemented modified Quasi-Saturation model from Kull and Nagel it is also possible to model the special output characteristic of switching transistors. The VBIC model is a extended development of the Standard Gummel-Poon (SGP) model with the focus of integrated bipolar transistors in today's modern semiconductor technologies. VBIC - Vertical Bipolar Inter Company model ![]() The following documentation has been supplied by Dr. Dietmar Warning of DAnalyse GmbH, Berlin, Germany LTspice includes a version of VBIC. Set Level=504 to use the MEXTRAM 504 transistor due to NXP(Philips).ĭue to a generous contribution of source code from Dr.-Ing. The model parameter "level" can be used to specify another type of BJT in LTspice. Maximum collector-emitter voltage with the base floating The following parameters may be specified. This information is displayed in the schematic capture GUI to assist in selecting a device but does not directly impact the electrical behavior in simulation. It is possible to annotate a model with device ratings. Quasi-saturation extrapolated bandgap voltage at 0°K Quasi-saturation flag for temperature dependence Quasi-saturation temperature coefficient for scattering-limited hole carrier velocity Quasi-saturation temperature coefficient for hole mobility Geometry selector if LPNP is not used: 1 means vertical 2 means lateralĬollector-base breakdown voltage coefficientĬurrent at base-emitter breakdown voltage ![]() Zero-bias collector-substrate capacitanceįraction of Cjs connected internally to Rcįorward and reverse beta temperature exponentĬoefficient for forward-bias depletion capacitance formula The BJT parameters used in the modified Gummel-Poon model are listed below.Ĭorner for forward beta high current roll-offĬorner for reverse beta high current roll-offĬurrent where base resistance falls halfway to its min valueįraction of B-C depletion capacitance connected to internal base nodeįraction of B-C depletion capacitance connected between internal base node and extrinsic collectorĮxtrinsicness of more intrinsic collector node used for substrate capacitance charge division OPTIONS control line or overridden by a specification on the. The values specified are assumed to have been measured at the temperature TNOM, which can be specified on the. Additionally base current temperature dependence is modeled by the beta temperature exponent XTB in the new model. The temperature dependence of the saturation current, Is, is determined by the energy gap, Eg, and the saturation-current temperature exponent, XTI. Base charge storage is modeled by forward and reverse transit times, Tf and Tr, the forward transit time Tf being bias dependent if desired and nonlinear depletion layer capacitances, which are determined by Cje, Vje and Mje, for the B-E junction, Cjc, Vjc, and MJC for the B-C junction and Cjs, Vjs, and Mjs for the Collector- Substrate junction. Three ohmic resistances Rb, Rc and Re, are included, where Rb can be high current dependent. The DC model is defined by the parameters Is, Bf, Nf, Ise, Ikf, and Ne which determine the forward current gain characteristics, Is, Br, Nr, Isc, Ikr, and Nc which determine the reverse current gain characteristics, and Vaf and Var which determine the output conductance for forward and reverse regions. The model automatically simplifies to the Ebers-Moll model when certain parameters are not specified. ![]() This modified Gummel-Poon model extends the original model to include several effects at high bias levels, quasi-saturation, and substrate conductivity. The bipolar junction transistor model is an adaptation of the integral charge control model of Gummel and Poon. The model card keywords NPN and PNP indicate the polarity of the transistor. ![]() Q1 C B E MyNPNmodel.model MyNPNmodel NPN(Bf=75)īipolar transistors require a model card to specify its characteristics. Syntax: Qxxx Collector Base Emitter model
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